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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SC2590 Absolute Maximun Ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CHA IN Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 120 120 5 0.5 1.0 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 1.2* 150 -55~150 Note) *: Without heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency IC=100|I IE=10|I CONDITIONS A;IB=0 A ;IC=0 MIN 120 5 2SC2590 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 COB fT TYP. MAX UNIT V V IC=0.3A ;IB=30mA IC=0.3A ;IB=30mA IC=150mA ; VCE=10V IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCB=10V,f=200MHz 200 90 65 100 1.0 1.2 220 V V 20 pF MHz hFE-1 Classifications Q R 90-155 CHA IN 130-220 E SEM NG OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2590 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2590 CHA IN E SEM NG OND IC TOR UC 4 |
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